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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2053 DESCRIPTION With TO-3PN package Wide area of safe operation Complement to type 2SB1362 APPLICATIONS For high power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 150 Collector-base voltage Open emitter Collector-emitter voltage Open base 150 5 Emitter-base voltage Open collector Collector current (DC) Collector current (Pulse) Ta=25ae 9 15 2.5 UNIT V V V A A PC Collector power dissipation TC=25ae 100 150 -55~150 ae ae W Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SD2053 SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA; IB=0 150 V VCEsat Collector-emitter saturation voltage IC=7A; IB=0.7A 2.0 V VBE Base-emitter on voltage IC=7A;VCE=5V 1.8 V ICBO Collector cut-off current VCB=150V; IE=0 50 |I A IEBO Emitter cut-off current VEB=5V; IC=0 50 |I A hFE-1 DC current gain IC=20mA ; VCE=5V 20 hFE-2 hFE-3 fT COB hFE-2 Classifications Q 60-120 P TOR NDU ICO E SEM ANG INCH DC current gain IC=7A ; VCE=5V 15 Transition frequency IC=0.5A ; VCE=5V 20 Collector output capacitance f=1MHz;VCB=10V 150 DC current gain IC=1A ; VCE=5V 60 200 MHz pF 100-200 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2053 TOR NDU ICO E SEM ANG INCH Fig.2 outline dimensions 3 |
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